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ION 107: Hot Topics in Ion Implantation


The course is designed to keep implant engineers updated with current knowledge in key important topical areas of ion implantation. Indeed, a student should be able to attend this course once per year and find an agenda with the same topics as a previous year but with totally new information that will assist them in their duties and job performance in the implant bay.

Topics for this course will be selected from the following: anneal, charging, contamination (metallic, species, energy, and particulate), metrology and process control, topics related to ion implanters (new system capabilities, upgrades, low energy performance, high energy, and machine matching), wafer characterization techniques, and SDS enhancements. The subject matter for these topics will change as knowledge and information is made available. The topics and associated module titles will be reflected in the outline for this course. Seasoned implant process engineers as well as young entry-level engineers will benefit from the information provided in this course.

Course Objectives

  • Become familiar with new knowledge in the field of ion implantation
  • Learn about new techniques in process control and wafer characterization
  • Be introduced to new implanters and metrology equipment
  • Gain insight to improving the performance of ion implanters and the implant process
  • Participate in discussions of new technology

Who Should Attend?

This course is specially designed for ion implant process engineers and other personnel who wish to learn about new procedures, equipment, and technology in ion implantation.

Course Length: 1 day

Course Materials: Course Notes

Instructor: Chuck Yarling

Topics Covered and Associated Module Titles

  • General: Historical Overview of Commercial I/I
  • Technology: The NTRS Roadmap For 2000 and Beyond
  • Process Control: Monitoring Species, Energy, Particles, and Contamination
  • Machine-Process Issues: Micro-Uniformity
  • SPC Techniques: The Z-Chart
  • Metrology: New Metrology Tools for I/I
  • Characterization: Performance and Characterization of Low Energy I/I
  • New Implanter Systems: Plasma Immersion Ion Implantation
  • Charging: Updates in CHARM-2 and other measurement techniques

email C B Yarling
Phone/Fax: 512.292.9189

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