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ION 105: Ion Implantation Process Engineering I

Course Description

This course covers the basic physics and technology of this versatile production process and the equipment used in IC wafer fabrication. The basic principles of operation of machines in medium current, high current and MeV configurations are discussed along with their similarities and differences. The process implications and possible complications of each topic are stressed throughout, particularly as they effect the variability of results obtained in production applications. The instructor will share his industrial experience from a practical perspective, referring back to the basic doping profiles wherever possible. The course is conducted in seminar style with active participation being encouraged throughout.

Course Objectives

  • Impart a practical working knowledge of the implantation technique.
  • Provide an understanding of simple models and process interactions will increase participant’s ability to trouble-shoot the system operation or related process results.
  • Reveal knowledge of process integration issues and the relationship of process applications to machine capabilities.
  • Increase job capability in implant processing as a result of discussions of industry best practices.
  • Direct participants to resources in the literature and contacts in the industry.

Who Should Attend?

This course is intended for process engineers involved in ion implantation as well as device engineers using implantation processes. It is a technical course that includes discussions of the implant process through math and physics equations. Other personnel who want to know more about the equipment and impact upon the processes being performed by ion implanters may also benefit from taking this course

Course Length: 2 days

Course Materials: Course Notes

Instructor: T. C. Smith

Course Outline

1. Introduction and Overview

  • Objectives
  • Historical Perspective
  • Ion Implantation Science and Technology
  • Review of Basic Concepts and Units

2. Implanted and Re-distributed Profiles

  • Stopping and Range of Ions
  • Doping and Masking Considerations
  • Channeling Effects
  • Damage and Annealing
  • Simple Diffusion Theory

3. Process Control Issues

  • Measurement Techniques
Four Point Probe
Optical Densitometry
  • Processing Sensitivity of Sheet Resistance
  • Processing Sensitivity of Junction Depth
  • Statistical Process Control

4. Process Flows for Device Fabrication

  • CMOS Technology
  • Bipolar Technology

5. System Considerations

  • Ion Sources
  • Mass Analyzers
  • End Stations
  • Equipment Configurations
  • System Maintenance
  • Vacuum Practices
  • Safety Issues
  • Safe Delivery Systems for gas
  • Equipment trends

6. Processing Considerations

  • Process Integration Issues
  • Summary of Dose Errors
  • Charge Exchange Phenomena
  • Metallic Contaminants
  • Particulates and Yield
  • Wafer Cooling
  • Photoresist Problems
  • Wafer Charging

7. Summary

email C B Yarling
Phone/Fax: 512.292.9189

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